DIODES ZXTN2005GTA

DIODES · Transistors (BJTs) · MPN ZXTN2005GTA

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Specifications

Current - Collector Cutoff1nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO8.1V
DC Current Gain300
Pd - Power Dissipation3W
Number1 NPN
typeNPN
Current - Collector(Ic)7A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))55mV

Technical details

Bipolar (BJT) Transistor NPN 25V 7A 150MHz 3W Surface Mount SOT-223

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