DIODES ZXTN19100CGTA

DIODES · Transistors (BJTs) · MPN ZXTN19100CGTA

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO7V
DC Current Gain130
Pd - Power Dissipation3W
Number1 NPN
typeNPN
Current - Collector(Ic)5.5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))65mV

Technical details

Bipolar (BJT) Transistor NPN 100V 5.5A 150MHz 3W Surface Mount SOT-223-3

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