DIODES ZXTN08400BNS-7

DIODES · Transistors (BJTs) · MPN ZXTN08400BNS-7

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Specifications

Current - Collector Cutoff50nA
DC Current Gain-
Pd - Power Dissipation1.83W
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO7V
Transition frequency(fT)40MHz
Vce Saturation(VCE(sat))175mV
typeNPN
Number2 NPN
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃

Technical details

1.83W 400V NPN 500mA Bipolar Transistor Arrays RoHS

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