DIODES ZXTN04120HKTC

DIODES · Transistors (BJTs) · MPN ZXTN04120HKTC

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO120V
DC Current Gain2000
Pd - Power Dissipation1.5W
typeNPN
Current - Collector(Ic)1.5A
Operating Temperature-55℃~+150℃@(Tj)
Vce Saturation(VCE(sat))1.5V

Technical details

120V 2000 NPN 1.5A TO-252(DPAK) Single Bipolar Transistors RoHS

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