DIODES ZXTD6717E6QTA

DIODES · Transistors (BJTs) · MPN ZXTD6717E6QTA

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Specifications

Current - Collector Cutoff10nA
Collector - Emitter Voltage VCEO15V
DC Current Gain300
Pd - Power Dissipation1.1W
Emitter-Base Voltage VEBO7V
Transition frequency(fT)180MHz
typeNPN+PNP
Vce Saturation(VCE(sat))-
Number1 NPN + 1 PNP
Current - Collector(Ic)1.5A
Operating Temperature-55℃~+150℃

Technical details

15V 300 1.1W NPN+PNP 1.5A SOT-26 Bipolar Transistor Arrays RoHS

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