DIODES ZXTD4591E6TA

DIODES · Transistors (BJTs) · MPN ZXTD4591E6TA

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Specifications

Current - Collector Cutoff100nA
DC Current Gain80
Collector - Emitter Voltage VCEO60V
Pd - Power Dissipation1.1W
Emitter-Base Voltage VEBO7V
Transition frequency(fT)180MHz
Vce Saturation(VCE(sat))500mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN+PNP 60V 1A 180MHz 1.1W Surface Mount SOT-26

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