DIODES ZXTD09N50DE6TA

DIODES · Transistors (BJTs) · MPN ZXTD09N50DE6TA

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Specifications

Current - Collector Cutoff10nA
DC Current Gain200
Pd - Power Dissipation1.1W
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO7V
Transition frequency(fT)215MHz
Vce Saturation(VCE(sat))270mV
typeNPN
Number2 NPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 50V 1A 215MHz 1.1W Surface Mount SOT-26

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