DIODES ZXTC6718MCTA

DIODES · Transistors (BJTs) · MPN ZXTC6718MCTA

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Specifications

Current - Collector Cutoff100nA
Pd - Power Dissipation2.45W
DC Current Gain200
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO7V
Transition frequency(fT)180MHz
typeNPN+PNP
Vce Saturation(VCE(sat))-
Number1 NPN + 1 PNP
Current - Collector(Ic)5A
Operating Temperature-55℃~+150℃

Technical details

2.45W 200 20V NPN+PNP 5A W-DFN3020-8 Bipolar Transistor Arrays RoHS

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