DIODES ZXTC6717MCTA

DIODES · Transistors (BJTs) · MPN ZXTC6717MCTA

No reviews yet — be the first to review DIODES ZXTC6717MCTA.

Specifications

Current - Collector Cutoff100nA
DC Current Gain415;475
Pd - Power Dissipation1.5W
Collector - Emitter Voltage VCEO15V;12V
Emitter-Base Voltage VEBO7V
Transition frequency(fT)120MHz;110MHz
Vce Saturation(VCE(sat))70mV;100mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)5A;4.45A
Operating Temperature-55℃~+150℃

Technical details

1.5W NPN+PNP DFN-8-EP(2x3) Bipolar Transistor Arrays RoHS

Related Transistors (BJTs)