DIODES ZXTC2063E6TA

DIODES · Transistors (BJTs) · MPN ZXTC2063E6TA

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Specifications

Current - Collector Cutoff50nA
DC Current Gain280
Pd - Power Dissipation1.1W
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO8.3V
Transition frequency(fT)190MHz
Vce Saturation(VCE(sat))60mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)3.5A
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN+PNP 40V 3.5A 190MHz 1.1W Surface Mount SOT-26

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