DIODES ZXTC2062E6TA

DIODES · Transistors (BJTs) · MPN ZXTC2062E6TA

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Specifications

Current - Collector Cutoff50nA
DC Current Gain140
Pd - Power Dissipation1.7W
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO7V
Transition frequency(fT)215MHz
Vce Saturation(VCE(sat))115mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)4A
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN+PNP 20V 4A 215MHz 1.7W Surface Mount SOT-26

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