DIODES ZXTC2061E6TA

DIODES · Transistors (BJTs) · MPN ZXTC2061E6TA

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Specifications

Current - Collector Cutoff50uA
DC Current Gain480
Pd - Power Dissipation1.7W
Collector - Emitter Voltage VCEO12V
Emitter-Base Voltage VEBO7V
Transition frequency(fT)260MHz
Vce Saturation(VCE(sat))145mV
typeNPN+PNP
Current - Collector(Ic)5A
Operating Temperature-55℃~+150℃

Technical details

480 1.7W 12V NPN+PNP 5A SOT-26 Bipolar Transistor Arrays RoHS

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