DIODES ZXT849KTC

DIODES · Transistors (BJTs) · MPN ZXT849KTC

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Specifications

Current - Collector Cutoff20nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO30V
DC Current Gain100
Pd - Power Dissipation4.2W
typeNPN
Current - Collector(Ic)7A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))280mV

Technical details

30V 100 NPN 7A TO-252(DPAK) Single Bipolar Transistors RoHS

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