DIODES ZXT13P40DE6TA

DIODES · Transistors (BJTs) · MPN ZXT13P40DE6TA

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)115MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO7.5V
DC Current Gain100
Pd - Power Dissipation8.8W
Number1 PNP
typePNP
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))145mV

Technical details

Bipolar (BJT) Transistor PNP 40V 3A 115MHz 8.8W Surface Mount SOT-26

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