DIODES · Transistors (BJTs) · MPN ZXT13N50DE6QTA
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 115MHz |
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 7.5V |
| DC Current Gain | 300 |
| Pd - Power Dissipation | 1.1W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 4A |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 230mV |
50V 300 1 NPN NPN 4A SOT-26 Single Bipolar Transistors RoHS