DIODES ZXT13N20DE6TA

DIODES · Transistors (BJTs) · MPN ZXT13N20DE6TA

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)96MHz
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO7.5V
DC Current Gain200
Pd - Power Dissipation8.8W
Number1 NPN
typeNPN
Current - Collector(Ic)4.5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))75mV

Technical details

Bipolar (BJT) Transistor NPN 20V 4.5A 96MHz 8.8W Surface Mount SOT-26

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