DIODES ZXT12P40DXTA

DIODES · Transistors (BJTs) · MPN ZXT12P40DXTA

No reviews yet — be the first to review DIODES ZXT12P40DXTA.

Specifications

Current - Collector Cutoff100nA
DC Current Gain300
Collector - Emitter Voltage VCEO40V
Pd - Power Dissipation1.25W
Emitter-Base Voltage VEBO7.5V
Transition frequency(fT)130MHz
Vce Saturation(VCE(sat))260mV
typePNP
Number2 PNP
Current - Collector(Ic)2A
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 40V 2A 130MHz 1.25W MSOP-8

Related Transistors (BJTs)