DIODES ZXT12N50DXTC

DIODES · Transistors (BJTs) · MPN ZXT12N50DXTC

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)132MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain300
Pd - Power Dissipation1.04W
typeNPN
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))250mV

Technical details

50V 300 NPN 3A MSOP-8 Single Bipolar Transistors RoHS

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