DIODES ZXT10N50DE6TA

DIODES · Transistors (BJTs) · MPN ZXT10N50DE6TA

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)165MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain200
Pd - Power Dissipation1.1W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))200mV

Technical details

Bipolar (BJT) Transistor NPN 50V 3A 165MHz 1.1W Surface Mount SOT-26

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