DIODES ZXT10N15DE6TA

DIODES · Transistors (BJTs) · MPN ZXT10N15DE6TA

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)120MHz
Collector - Emitter Voltage VCEO15V
Emitter-Base Voltage VEBO8.2V
DC Current Gain200
Pd - Power Dissipation8.8W
Number1 NPN
typeNPN
Current - Collector(Ic)4A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))165mV

Technical details

Bipolar (BJT) Transistor NPN 15V 4A 120MHz 8.8W Surface Mount SOT-26

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