DIODES ZX5T853GTA

DIODES · Transistors (BJTs) · MPN ZX5T853GTA

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Specifications

Current - Collector Cutoff20nA
Transition frequency(fT)130MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO7V
DC Current Gain30
Pd - Power Dissipation3W
Number1 NPN
typeNPN
Current - Collector(Ic)6A
Vce Saturation(VCE(sat))180mV
Operating Temperature-55℃~+150℃

Technical details

100V 30 1 NPN NPN 6A SOT-223-4 Single Bipolar Transistors RoHS

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