DIODES ZUMTS17NTA

DIODES · Transistors (BJTs) · MPN ZUMTS17NTA

No reviews yet — be the first to review DIODES ZUMTS17NTA.

Specifications

Emitter-Base Voltage(Vebo)3V
Current - Collector Cutoff500nA
Collector - Emitter Voltage VCEO11V
DC Current Gain56
Pd - Power Dissipation350mW
Operating Temperature-55℃~+150℃
Current - Collector(Ic)50mA
Transition frequency(fT)3.2GHz
Vce Saturation(VCE(sat))500mV
typeNPN
Number1 NPN

Technical details

Bipolar (BJT) Transistor NPN 11V 50mA 3.2GHz 350mW Surface Mount SOT-323

Related Transistors (BJTs)