DIODES ZTX968

DIODES · Transistors (BJTs) · MPN ZTX968

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO12V
Emitter-Base Voltage VEBO6V
DC Current Gain300
Pd - Power Dissipation1.58W
Number1 PNP
typePNP
Current - Collector(Ic)4.5A
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+200℃

Technical details

Bipolar (BJT) Transistor PNP 12V 4.5A 80MHz 1.58W Through Hole TO-92

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