DIODES ZTX857QSTZ

DIODES · Transistors (BJTs) · MPN ZTX857QSTZ

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO300V
DC Current Gain100
Pd - Power Dissipation1.2W
typeNPN
Current - Collector(Ic)3A
Operating Temperature-55℃~+200℃
Vce Saturation(VCE(sat))250mV

Technical details

300V 100 NPN 3A Single Bipolar Transistors RoHS

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