DIODES ZTX855STZ

DIODES · Transistors (BJTs) · MPN ZTX855STZ

No reviews yet — be the first to review DIODES ZTX855STZ.

Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)90MHz
Collector - Emitter Voltage VCEO150V
DC Current Gain100
Pd - Power Dissipation1.2W
typeNPN
Current - Collector(Ic)4A
Vce Saturation(VCE(sat))260mV
Operating Temperature-55℃~+200℃

Technical details

150V 100 NPN 4A Single Bipolar Transistors RoHS

Related Transistors (BJTs)