DIODES ZTX853STZ

DIODES · Transistors (BJTs) · MPN ZTX853STZ

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)130MHz
Collector - Emitter Voltage VCEO100V
DC Current Gain100
Pd - Power Dissipation1.2W
typeNPN
Current - Collector(Ic)4A
Vce Saturation(VCE(sat))200mV
Operating Temperature-55℃~+200℃

Technical details

100V 100 NPN 4A Single Bipolar Transistors RoHS

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