DIODES ZTX849STZ

DIODES · Transistors (BJTs) · MPN ZTX849STZ

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO6V
DC Current Gain100
Pd - Power Dissipation1.58W
Number1 NPN
typeNPN
Current - Collector(Ic)5A
Operating Temperature-55℃~+200℃
Vce Saturation(VCE(sat))220mV

Technical details

30V 100 1 NPN NPN 5A Single Bipolar Transistors RoHS

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