DIODES · Transistors (BJTs) · MPN ZTX849
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| Transition frequency(fT) | 100MHz |
|---|---|
| Collector - Emitter Voltage VCEO | 30V |
| DC Current Gain | 300 |
| Emitter-Base Voltage VEBO | 6V |
| Pd - Power Dissipation | 1.58W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 5A |
| Operating Temperature | -55℃~+200℃ |
Bipolar (BJT) Transistor NPN 30V 5A 100MHz 1.58W Through Hole TO-92