DIODES ZTX694B

DIODES · Transistors (BJTs) · MPN ZTX694B

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)130MHz
Collector - Emitter Voltage VCEO120V
Emitter-Base Voltage VEBO5V
DC Current Gain400
Pd - Power Dissipation1.5W
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Operating Temperature-55℃~+200℃
Vce Saturation(VCE(sat))250mV

Technical details

Bipolar (BJT) Transistor NPN 120V 0.5A 130MHz 1.5W Through Hole TO-92

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