DIODES ZTX657STZ

DIODES · Transistors (BJTs) · MPN ZTX657STZ

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)30MHz
Collector - Emitter Voltage VCEO300V
Emitter-Base Voltage VEBO5V
DC Current Gain50
Pd - Power Dissipation1W
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+200℃

Technical details

Bipolar (BJT) Transistor NPN 300V 500mA 30MHz 1W Through Hole TO-92

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