DIODES ZTX653STZ

DIODES · Transistors (BJTs) · MPN ZTX653STZ

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)175MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain-
Pd - Power Dissipation1W
Number1 NPN
typeNPN
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))130mV
Operating Temperature-55℃~+200℃

Technical details

Bipolar (BJT) Transistor NPN 100V 2A 175MHz 1W Through Hole E-Line-3

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