DIODES ZTX653QSTZ

DIODES · Transistors (BJTs) · MPN ZTX653QSTZ

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)175MHz
Collector - Emitter Voltage VCEO100V
Pd - Power Dissipation1W
typeNPN
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+200℃

Technical details

100V NPN 2A Single Bipolar Transistors RoHS

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