DIODES ZTX558QSTZ

DIODES · Transistors (BJTs) · MPN ZTX558QSTZ

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO400V
DC Current Gain100
Pd - Power Dissipation1W
typePNP
Current - Collector(Ic)200mA
Operating Temperature-55℃~+200℃@(Tj)
Vce Saturation(VCE(sat))-

Technical details

400V 100 PNP 200mA Single Bipolar Transistors RoHS

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