DIODES ZTX551

DIODES · Transistors (BJTs) · MPN ZTX551

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain50
Pd - Power Dissipation1W
Number1 PNP
typePNP
Current - Collector(Ic)1A
Operating Temperature-55℃~+200℃
Vce Saturation(VCE(sat))350mV

Technical details

Bipolar (BJT) Transistor PNP 60V 1A 150MHz 1W Through Hole TO-92

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