DIODES ZTX458STZ

DIODES · Transistors (BJTs) · MPN ZTX458STZ

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation1W
Number1 NPN
typeNPN
Current - Collector(Ic)300mA
Operating Temperature-55℃~+200℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 400V 300mA 50MHz 1W Through Hole TO-92-3

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