DIODES ZTX1051A

DIODES · Transistors (BJTs) · MPN ZTX1051A

No reviews yet — be the first to review DIODES ZTX1051A.

Specifications

Current - Collector Cutoff10nA
Transition frequency(fT)155MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO5V
DC Current Gain290
Pd - Power Dissipation1W
typeNPN
Current - Collector(Ic)4A
Vce Saturation(VCE(sat))17mV
Operating Temperature-55℃~+200℃

Technical details

Bipolar (BJT) Transistor NPN 40V 4A 155MHz 1W Through Hole TO-92

Related Transistors (BJTs)