DIODES ZDT6702QTA

DIODES · Transistors (BJTs) · MPN ZDT6702QTA

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Specifications

Current - Collector Cutoff500nA
DC Current Gain5000
Pd - Power Dissipation2.75W
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO15V
Transition frequency(fT)140MHz
Vce Saturation(VCE(sat))1.28V
typeNPN+PNP
Current - Collector(Ic)1.75A
Operating Temperature-55℃~+150℃

Technical details

5000 2.75W 100V NPN+PNP 1.75A SOT-223-8 Bipolar Transistor Arrays RoHS

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