DIODES UMG4N-7

DIODES · Transistors (BJTs) · MPN UMG4N-7

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain100
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Input Resistor13kΩ
Number2 NPN (Pre-Biased)
Pd - Power Dissipation150mW

Technical details

50V 100 100mA 2 NPN (Pre-Biased) 150mW SOT-353 Single, Pre-Biased Bipolar Transistors RoHS

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