DIODES MMSTA42-7-F

DIODES · Transistors (BJTs) · MPN MMSTA42-7-F

No reviews yet — be the first to review DIODES MMSTA42-7-F.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO300V
Emitter-Base Voltage VEBO6V
DC Current Gain40
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 300V 200mA 50MHz 200mW Surface Mount SOT-323

Related Transistors (BJTs)