DIODES MMDTA42-7-F

DIODES · Transistors (BJTs) · MPN MMDTA42-7-F

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Specifications

Current - Collector Cutoff100nA
DC Current Gain40
Pd - Power Dissipation300mW
Collector - Emitter Voltage VCEO300V
Emitter-Base Voltage VEBO6V
Transition frequency(fT)50MHz
Vce Saturation(VCE(sat))500mV
typeNPN
Number2 NPN
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 300V 500mA 50MHz 300mW Surface Mount SOT-26

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