DIODES MMDTA06-7

DIODES · Transistors (BJTs) · MPN MMDTA06-7

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Specifications

Current - Collector Cutoff100nA
DC Current Gain100
Collector - Emitter Voltage VCEO80V
Pd - Power Dissipation10.3W
Emitter-Base Voltage VEBO6V
Transition frequency(fT)163MHz
typeNPN
Vce Saturation(VCE(sat))250mV
Number2 NPN
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 80V 500mA 163MHz 10.3W Surface Mount SOT-26

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