DIODES MMDT5401Q-7-F

DIODES · Transistors (BJTs) · MPN MMDT5401Q-7-F

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Specifications

Current - Collector Cutoff50nA
Collector - Emitter Voltage VCEO150V
DC Current Gain60
Pd - Power Dissipation320mW
Emitter-Base Voltage VEBO6V
Transition frequency(fT)300MHz
Vce Saturation(VCE(sat))500mV
typePNP
Number2 PNP
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃

Technical details

150V 60 320mW PNP 200mA SOT-363 Bipolar Transistor Arrays RoHS

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