DIODES MMDT5401-7-F

DIODES · Transistors (BJTs) · MPN MMDT5401-7-F

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Specifications

Current - Collector Cutoff50uA
DC Current Gain60
Collector - Emitter Voltage VCEO150V
Pd - Power Dissipation320mW
Emitter-Base Voltage VEBO6V
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))200mV
typePNP
Number2 PNP
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 150V 200mA 100MHz 320mW Surface Mount SOT-363

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