DIODES MMDT4403-7-F

DIODES · Transistors (BJTs) · MPN MMDT4403-7-F

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Specifications

Current - Collector Cutoff100nA
DC Current Gain100
Collector - Emitter Voltage VCEO40V
Pd - Power Dissipation200mW
Emitter-Base Voltage VEBO5V
Transition frequency(fT)200MHz
Vce Saturation(VCE(sat))400mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN+PNP 40V 600mA 200MHz 200mW Surface Mount SOT-363

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