DIODES MMDT3906V-7

DIODES · Transistors (BJTs) · MPN MMDT3906V-7

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Specifications

Current - Collector Cutoff50nA
Pd - Power Dissipation150mW
DC Current Gain100
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO5V
Transition frequency(fT)250MHz
Vce Saturation(VCE(sat))400mV
typePNP
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃

Technical details

150mW 100 40V PNP 200mA SOT-563 Bipolar Transistor Arrays RoHS

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