DIODES MMDT3906Q-7

DIODES · Transistors (BJTs) · MPN MMDT3906Q-7

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Specifications

Current - Collector Cutoff50nA
Collector - Emitter Voltage VCEO40V
Pd - Power Dissipation200mW
Emitter-Base Voltage VEBO6V
Transition frequency(fT)250MHz
typePNP
Current - Collector(Ic)200mA

Technical details

40V 200mW PNP 200mA SOT-363 Bipolar Transistor Arrays RoHS

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