DIODES MMDT3906-7-F

DIODES · Transistors (BJTs) · MPN MMDT3906-7-F

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Specifications

Current - Collector Cutoff50nA
DC Current Gain100
Collector - Emitter Voltage VCEO40V
Pd - Power Dissipation200mW
Emitter-Base Voltage VEBO5V
Transition frequency(fT)250MHz
Vce Saturation(VCE(sat))250mV
typePNP
Number2 PNP
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 200mW Surface Mount SOT-363

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