DIODES MMDT3904-7-F

DIODES · Transistors (BJTs) · MPN MMDT3904-7-F

No reviews yet — be the first to review DIODES MMDT3904-7-F.

Specifications

Current - Collector Cutoff50nA
DC Current Gain100
Collector - Emitter Voltage VCEO40V
Pd - Power Dissipation200mW
Emitter-Base Voltage VEBO6V
Transition frequency(fT)300MHz
Vce Saturation(VCE(sat))200mV
typeNPN
Number2 NPN
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 200mW Surface Mount SOT-363

Related Transistors (BJTs)