DIODES MMDT2907VQ-7

DIODES · Transistors (BJTs) · MPN MMDT2907VQ-7

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Specifications

Current - Collector Cutoff10nA
Pd - Power Dissipation150mW
DC Current Gain100
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
Transition frequency(fT)200MHz
Vce Saturation(VCE(sat))1.6V
typePNP
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃

Technical details

150mW 100 60V PNP 600mA SOT-563 Bipolar Transistor Arrays RoHS

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