DIODES MMDT2907V-7

DIODES · Transistors (BJTs) · MPN MMDT2907V-7

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Specifications

Current - Collector Cutoff10nA
DC Current Gain100
Collector - Emitter Voltage VCEO60V
Pd - Power Dissipation150mW
Emitter-Base Voltage VEBO5V
Transition frequency(fT)200MHz
Vce Saturation(VCE(sat))1.6V
typePNP
Number2 PNP
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 150mW Surface Mount SOT-563

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